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SLG59H1020V

SLG59H1020V

HFET1™ 50 mΩ NMOS power switch

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A 20 V, 50 mΩ, 3 A, Reverse Blocking Integrated Power Switch with VIN Lockout Select and MOSFET Current Monitor Output

The SLG59H1020V is a high-performance, self-powered 50 mΩ NMOS power switch with back-to-back reverse-current blocking designed for all 4.5 V to 20 V power rails up to 3 A. Using a proprietary MOSFET design, the SLG59H1020V achieves a stable 50 mΩ RDSON across a wide input voltage range. In combining novel FET design and copper pillar interconnects, the SLG59H1020V package also exhibits a low thermal resistance for high-current operation.

Designed to operate over a -40ºC to 85ºC range, the SLG59H1020V is available in a low thermal resistance, RoHS-compliant, 1.6 x 3.0 mm STQFN package.

Features

  • Optimized for Telecommunications Equipment, High-performance Enterprise Computing, Motor Drives
  • 50 mΩ RDSON
  • Maximum Continuous Switch Current: 3 A
  • Wide Operating Supply Voltage: 4.5 V to 20 V
  • Back-to-Back FET Reverse-current Blocking, when OFF
  • Automatic nFET SOA Protection
  • 4-Level, Pin-selectable VIN Overvoltage Lockout
  • Capacitor-adjustable Inrush Current Control

Features

  • Two stage Current Limit Protection:
    • Resistor-adjustable Active Current Limit
    • Fixed 0.5 A Short-circuit Current Limit
  • ON-OFF Control: Active HIGH
  • Package 1.6 x 3.0 x 0.55 mm STQFN-18
  • Power-Rail Switching
  • Multifunction Printers
  • Large-format Copiers
  • Telecommunications Equipment
  • High-performance Computing
    • 4.5 V and 20 V Point-of-Load Power Distribution
  • Motor Drives

Resources

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