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HFET1™ High-Voltage Integrated Power Control Switch

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A 13.3 mΩ, 4 A, 10 W SOA IPS with 12 V / 24 V Input Lockout Select and IDS Current Monitor Output

The SLG59H1017V is a high-performance 13.3 mΩ NMOS power switch designed to control 12 V or 24 V power rails up to 4 A. Using a proprietary MOSFET design, the SLG59H1017V achieves a stable 13.3 mΩ RDSON across a wide input voltage range. In combining novel FET design and copper pillar interconnects, the SLG59H1017V package also exhibits a low thermal resistance for high-current operation. Designed to operate over a -40 °C to 85 °C range, the SLG59H1017V is available in a low thermal resistance, RoHS-compliant, 1.6 x 3.0 mm STQFN package.



  • Low RDSON: 13.3 mΩ
  • Maximum Continuous Switch Current: 4 A;
  • Wide Operating Supply Voltage: 12 V or 24 V;
  • Automatic 10 W nFET SOA Protection;
  • Capacitor-adjustable Inrush Current Control;


  • Two stage Current Limit Protection:
    • Resistor-adjustable Active Current Limit;
    • Fixed 0.5A Short-circuit Current Limit;
  • Fast VOUT Discharge;
  • ON-OFF Control: Active HIGH;
  • Pb-free/RoHS-Compliant Package:
    • 1.6 x 3.0 x 0.55 mm, STQFN-18.


  • Power-Rail Switching
  • Multifunction Printers
  • Large-format Copiers
  • Telecommunications Equipment
  • High-performance Computing
    • 12 V and 24 V Point-of-Load Power Distribution
  • Motor Drives
STQFN-18 (1.6 x 3.0 mm)

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