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SLG59H1013V

SLG59H1013V

HFET1™ High-Voltage Integrated Power Control Switch

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A 125 °C-rated, 13.3 mΩ, 3.5 A Integrated Power Switch with 12 V / 24 V Input Lockout Select & IDS Current Monitor Output

The SLG59H1013V is a high-performance 13.3 mΩ NMOS power switch designed to control 12 V or 24 V power rails up to 3.5 A. Using a proprietary MOSFET design, the SLG59H1013V achieves a stable 13.3 mΩ RDSON across a wide input voltage range. In combining novel FET design and copper pillar interconnects, the SLG59H1013V package also exhibits a low thermal resistance for high-current operation. Designed to operate over a -40 °C to 125 °C range, the SLG59H1013V is available in a low thermal resistance, RoHS-compliant, 1.6 x 3.0 mm STQFN package.

Features

  • Optimized for Telecommunications Equipment, High-performance Enterprise Computing, Motor Drives
  • 13.3 mΩ RDSON
  • Maximum Continuous Switch Current: 3.5 A
  • Wide Operating Supply Voltage: 12 V or 24 V
  • Automatic nFET SOA Protection
  • 2-Level, Pin-selectable VIN Overvoltage Lockout
  • Capacitor-adjustable Inrush Current Control
  • Two stage Current Limit Protection:
    • Resistor-adjustable Active Current Limit
    • Fixed 0.5A Short-circuit Current Limit

Features

  • Open Drain FAULT Signaling
  • IDS Current Analog Output Monitor: 10 μA/A
  • ON-OFF Control: Active HIGH
  • Operating Temperature:-40°C to 125°C
  • Package 1.6 x 3.0 x 0.55 mm STQFN-18

Applications

  • Power-Rail Switching
  • Multifunction Printers
  • Large-format Copiers
  • Telecommunications Equipment
  • High-performance Computing 12 V and 24 V Point-of-Load Power Distribution
  • Motor Drives
Packages
STQFN-18 (1.6 x 3.0 mm)

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