Skip to main content

Memory

Dialog Improves System Performance

Non-volatile memory (NVM) is a key component at the heart of every system design. It holds critical data, controls how the system boots, and affects overall performance. Choosing the right NVM is key. We’re here to help. Our wide range of NVM products offer an array of features designed to help tune and optimize your system.

Octal xSPI Memory

Hi-Performace

xSPI (8x SPI)

High bandwidth

Low power

eXecute-in-Place (XiP)

Read-While-Write

Security

See More

Dual / Quad SPI Memory

Universal

SPI, Dual, Quad

1.8V, 3.0V. Wide VCC

Ultra-low Energy, Low Power

7nA sleep

Battery monitor

Security

See More

DataFlash SPI Memory

Fast Flexible Robust

Concurrent programming

Easy to use

Power fail protection

Data integrity

Low power modes

Security

See More

Wafer KGD

Known Good Die program

Up to 125°C operating temperature

All voltage levels

  • 1.8V
  • 3.0V
  • Wide Voltage 1.65V to 3.6V

See More

Verified Memory for NXP

Low Power and high-speed SPI Flash solutions for NXP i.MX RT MCUs

See More

Verified Memory for ST Microelectronics

Dialog SPI Flash solutions verified on over 30 STM32 MCUs

See More

CBRAM Technology

CBRAM is a resistive RAM technology that provides power, speed, and cost benefits over other non-volatile memory technologies. It is well suited for battery powered devices, edge computing, and AI applications.

See More

Stay connected

Get in touch with us directly through our worldwide sales offices, or contact one of our global distributors and representatives.

Inquiries Distributors and Representatives Register for newsletters
Back to results

Memory

1 week ago

AT25SF641B-SHB-T chip erase timing

Posted by Robert Hulsebos 10 points 1 reply
0 upvotes

I am currently evaluating the AT25SF641B-SHB-T device as replacement for other SPI flash device. I found that timing for chip erase operation (command 0xC7) is much much faster than specified by datasheet ( DS-AT25SF641B-191D-122020.pdf )

The datasheet states on page 51 a typical chip erase time of 30 seconds. I measure about 1220 ms here. (operating the device at room temp, 3.3V) Is the datasheet wrong here? Or am I overlooking something? Timings for other operations seem in line with datasheet. (64K erase=~219ms, 32K erase=~119ms, sector erase=~31ms)

1 week ago

gordonmacnee 220 points

The erase time in the datasheet assumes that each page has some programmed Bytes. If a page in a block is already erased then the block (or chip) erase will skip this page which reduces the erase time. Please try programming a large percentage of your flash chip and then running the erase routine and you will see the erase time extend. 

regards

Gordon