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CBRAM® Technology

Breakthrough Resistive RAM (ReRAM) Technology

ReRAM Technology

Speed and power consumption matter, especially in modern edge computing and AI applications that make up the Internet of Things (IoT). Standard, off the-shelf memory products can’t satisfy these requirements. What’s needed is a breakthrough memory technology that can meet the requirements of the billions of battery-operated devices communicating on the edge of the Internet.

Since 2007,  Dialog (through its acquisition of Adesto) has led the way in developing resistive RAM technology, and we are recognized in the industry for our strong patent portfolio. We have grown our Conductive Bridging RAM (CBRAM) resistive memory technology from atoms to circuits to products. Our know-how includes a fundamental understanding of the physics, materials and designs required to productize resistive memory, and extensive experience with the ecosystem; from raw materials to finished device manufacturing.

Why ReRAM?

Resistive RAM, in particular Dialog's CBRAM, offers significant advantages over other non-volatile memory technologies:

  • Speed and power
  • Ideal for embedded NVM
  • In memory computing
  • Tolerant to harsh environments

Performance for Demanding Applications

A notable advantage of CBRAM is that the write operation in its bit-cells is very fast (<1us) compared to standard flash memory technologies (~1ms), and it also does not require a bit to be pre-erased. This makes write operations on CBRAM products 20 times faster than standard flash, while consuming 10 to 100 times less energy.

Significantly Extended Battery Life

Dialog's CBRAM technology is a breakthrough non-volatile ReRAM memory technology. It consumes significantly less energy than today’s leading memories without sacrificing performance or reliability. This discrete non-volatile memory (NVM) technology can achieve 50-100x lower power in read/write operations compared to competitive solutions.

With CBRAM, designers can extend the battery life of their systems and/or use smaller batteries, or even design systems for battery-free operation through energy harvesting. Since CBRAM can withstand medical sterilization processes, it’s also ideal for smart medical devices.

A Look Inside CBRAM

Dialog's CBRAM memory is created by applying fab-friendly, patented metallization and dielectric stack layers between standard CMOS interconnect metal layers. The result is a superior NVM technology that’s easy to embed into standard logic flows.

CBRAM technology relies on the electrochemical making and breaking of a conductive link. This process changes the resistance of the CBRAM storage element which is used to represent data. The conductive link is robust and can withstand high thermal stresses.


View of Dialog's Resistive Memory Architecture. Data stored as a robust conductive bridge vs. charges on a traditional floating gate

Cross section of CBRAM product demonstrates the ease of integration in a standard CMOS process.

Operating principle of CBRAM; data stored as robust conductive links created by voltages and currents.

CBRAM is used in a multitude of applications with demanding environments and conditions. Unlike other non-volatile memory technologies, CBRAM provides a robust solution and is well suited for harsh environments.

Tolerant to Harsh Environments
Test Condition Result
Gamma 200kGy (20M rad) Passed
e-beam 200kGy (20M rad) Passed
Heavy Ion 75 MeV·cm2/mg Passed
High Temp (SMT) 10min @ 260ºC Passed
Magnetic fields ~103 Gauss Passed
UV light 30min @ 12mW/cm2 Passed

Dialog's Licensing Program of CBRAM Technology

Dialog (through its acquisition of Adesto) is the recognized leader in the commercialization of resistive memories and in forging licensing agreements with SoC partners in the semiconductor industry. Foundries, IDMs or fabless companies looking for low-power embedded NVM solutions should contact us directly to explore partnership opportunities.

Shanghai Huali Microelectronics Corporation (HLMC) Announces Collaboration with Adesto and CNE

DB HiTek Licenses Adesto’s CBRAM® Technology for IoT Applications

Dialog's ReRAM in Production

We were the first company to successfully commercialize a ReRAM technology. Commercial products taking advantage of Dialog's proven CBRAM ReRAM technology are in production today. From medical devices to satellites, CBRAM benefits include the ability to survive in harsh environments. Consumer and energy harvesting applications are taking advantage of CBRAM’s power and performance.

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Memory

2 months ago

AT45DB041E FLASH_ERASE_WRITE_PAGE

Posted by christian.oppliger 10 points 1 reply
0 upvotes

Hi all

We use the AT45DB041E  flash. In the datasheet is written that the endurance is 100'000 programm/erase cycles per page minimum.

In case that i erase the page with cmd nr  81h and programm page with cmd nr 02h there are only 50'000 cycles right?

in case of using the cmd erase and programm (82h) there will be 100 cylces?

is that correctly?

 

Thank you

 

 

2 months ago

gordonmacnee 65 points

Hi Christian,

We count a Program and Erase as one cycle so you could program and erase a page of memory 100K times (we have seen customers cycle these parts up to 2M times before giving up testing without failures but we can not guarantee this performance). We would STRONGLY recommend that you keep static data and high endurance data in separate 64k Blocks to ensure that the writes to the high endurance area does not 'disturb' the static data. If this can not be easily managed, then we recommend rewriting the static data every ~50k cycles of the high endurance data and we include a READ-MODIFY-WRITE command to help with this.

As you increase the number of cycles a specific part of memory has undergone you will see program and erase times creep out towards the maxima in the datasheets. 

Note that we have the EPE bit in the status register that helps manage Run until First Failure systems where you cycle the part until an operation fails. This bit will indicate whether a program or erase cycle completes successfully. So the program or erase cycle becomes - start program cycle - test Status Reg bit 7 (Ready/Busy bit) - when READY test EPE bit...